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Freescale Semiconductor Technical Data
Document Number: MMG3013NT1 Rev. 6, 3/2008
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NOT RECOMMENDED FOR NEW DESIGN
The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 0 - 6000 MHz * P1dB: 20.5 dBm @ 900 MHz * Small - Signal Gain: 20 dB @ 900 MHz * Third Order Output Intercept Point: 36 dBm @ 900 MHz * Single 5 Volt Supply * Internally Matched to 50 Ohms * Low Cost SOT - 89 Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
0 - 6000 MHz, 20 dB 20.5 dBm InGaP HBT
12
3
CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC
Table 1. Typical Performance (1)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 20 - 17 - 11 20.5 36 2140 MHz 17 - 19 -9 20.5 34 3500 MHz 14.5 - 15 - 12 19 32 Unit dB dB dB dBm dBm
Table 2. Maximum Ratings
Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VCC ICC Pin Tstg TJ Value 7 300 12 - 65 to +150 150 Unit V mA dBm C C
2. For reliable operation, the junction temperature should not exceed 150C.
1. VCC = 5 Vdc, TC = 25C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 90 mA, TC = 25C)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 42 Unit C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
MMG3013NT1 1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Broadband High Linearity Amplifier
MMG3013NT1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) 900 MHz 2140 MHz Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 19.3 16 -- -- -- -- -- 80 -- Typ 20 17 - 17 - 11 20.5 36 4 90 5 Max -- -- -- -- -- -- -- 110 -- Unit dB dB
NOT RECOMMENDED FOR NEW DESIGN
Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage
(1)
dBm dBm dB mA V
1. For reliable operation, the junction temperature should not exceed 150C.
MMG3013NT1 2 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Output Return Loss (S22)
dB
Table 5. Functional Pin Description
Pin Number 1 RFin RFout/DC Supply 2 3 Pin Function 2
NOT RECOMMENDED FOR NEW DESIGN
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
MMG3013NT1 RF Device Data Freescale Semiconductor 3
NOT RECOMMENDED FOR NEW DESIGN
Ground
50 OHM TYPICAL CHARACTERISTICS
25 Gp, SMALL-SIGNAL GAIN (dB) TC = 85C 20 - 40C 25C -10 S11, S22 (dB) 0 S22
NOT RECOMMENDED FOR NEW DESIGN
-20 S11 -30
15
VCC = 5 Vdc 10 0 1 2 f, FREQUENCY (GHz) 3 4 -40 0 1 2 f, FREQUENCY (GHz) 3
VCC = 5 Vdc ICC = 90 mA 4
Figure 2. Small - Signal Gain (S21) versus Frequency
Figure 3. Input/Output Return Loss versus Frequency
23 P1dB, 1 dB COMPRESSION POINT (dBm) 21 19 1960 MHz 17 15 13 11 9 10 12 14 16 18 20 Pout, OUTPUT POWER (dBm) VCC = 5 Vdc ICC = 90 mA 2600 MHz 3500 MHz 900 MHz 2140 MHz
23 22 21 20 19 18 17 16 0.5 1 1.5 2 2.5 3 3.5 f, FREQUENCY (GHz) VCC = 5 Vdc ICC = 90 mA
Figure 4. Small - Signal Gain versus Output Power
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 180 ICC, COLLECTOR CURRENT (mA) 160 140 120 100 80 60 40 20 0 4 4.2 4.4 4.6 4.8 5 5.2 5.4 VCC, COLLECTOR VOLTAGE (V) 39
Figure 5. P1dB versus Frequency
36
33
30 VCC = 5 Vdc ICC = 90 mA 1 MHz Tone Spacing 0 1 2 f, FREQUENCY (GHz) 3 4
27
24
Figure 6. Collector Current versus Collector Voltage
Figure 7. Third Order Output Intercept Point versus Frequency
MMG3013NT1 4 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Gp, SMALL-SIGNAL GAIN (dB)
50 OHM TYPICAL CHARACTERISTICS
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 39 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 38 37
36
NOT RECOMMENDED FOR NEW DESIGN
33
35 34 33 32 31 -40 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing -20 0 20 40 60 80 100
30
27 f = 900 MHz 1 MHz Tone Spacing 24 4.9 4.95 5 5.05 5.1 VCC, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point versus Collector Voltage
Figure 9. Third Order Output Intercept Point versus Case Temperature
-30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -40 MTTF (YEARS)
105
-50
104
-60 VCC = 5 Vdc ICC = 90 mA f = 900 MHz 1 MHz Tone Spacing
-70
-80 5 8 11 14 17 20 Pout, OUTPUT POWER (dBm)
103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 90 mA
Figure 10. Third Order Intermodulation versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 11. MTTF versus Junction Temperature
8
-20 VCC = 5 Vdc, ICC = 90 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
NF, NOISE FIGURE (dB)
6
-30
-40
4
-50
2 VCC = 5 Vdc ICC = 90 mA 0 0 1 2 f, FREQUENCY (GHz) 3 4
-60
-70 6 8 10 12 14 16 18 Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3013NT1
RF Device Data Freescale Semiconductor
5
NOT RECOMMENDED FOR NEW DESIGN
36
50 OHM APPLICATION CIRCUIT: 40- 800 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30 S21 20 R1 10 0 -10 -20 S11 -30 -40 0 200 400 f, FREQUENCY (MHz) 600 800 VCC = 5 Vdc ICC = 90 mA MMG30XX Rev 2 C1 C4 C3 L1 S22 C2
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 L1 R1 Description 0.01 F Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 470 nH Chip Inductor 0 W Chip Resistor Part Number C0603C103J5RAC C0603C104J5RAC C0603C105J5RAC BK2125HM471 - T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet Taiyo Yuden Panasonic
MMG3013NT1 6 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM APPLICATION CIRCUIT: 800 - 3600 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30 20 10 0 -10 -20 S11 -30 800 1200 1600 2000 2400 2800 S22 C1 L1 C2 S21
R1 C4 C3
VCC = 5 Vdc ICC = 90 mA 3200 3600
MMG30XX Rev 2
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 L1 R1 Description 150 pF Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 56 nH Chip Inductor 0 W Chip Resistor Part Number C0603C151J5RAC C0603C104J5RAC C0603C105J5RAC HK160856NJ - T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet Taiyo Yuden Panasonic
MMG3013NT1 RF Device Data Freescale Semiconductor 7
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 90 mA, TC = 25C, 50 Ohm System)
f MHz 100 S11 |S11| 0.162717 0.160561 0.160153 0.157910 0.155640 0.152870 0.150710 0.148730 0.145840 0.143950 0.141980 0.140120 0.138450 0.137510 0.136570 0.134433 0.132707 0.131087 0.129567 0.128275 0.127137 0.125513 0.124020 0.122379 0.121234 0.120081 0.118817 0.116609 0.115374 0.113850 0.113120 0.112080 0.111350 0.110660 0.110070 0.109570 0.108940 0.107610 0.106800 0.106240 0.104410 0.103200 0.102820 0.101220 171.108 167.971 163.027 159.994 156.091 152.178 148.189 144.135 140.465 136.404 132.557 128.67 124.924 121.228 117.62 114.245 110.998 107.842 104.859 102.209 99.637 97.509 95.409 93.482 91.761 90.16 88.664 87.326 86.23 80.021 77.212 75.253 72.833 70.651 68.704 66.752 64.808 63.28 61.916 60.415 59.082 57.787 56.94 55.6 |S21| 11.479238 11.415032 11.337210 11.263950 11.200930 11.160790 11.096270 11.027770 10.957540 10.876040 10.785240 10.695820 10.604510 10.504830 10.400340 10.295550 10.186390 10.073620 9.965510 9.842290 9.725320 9.610100 9.485500 9.367530 9.251560 9.129800 9.011610 8.892430 8.772640 8.708890 8.598320 8.485180 8.379040 8.273700 8.167240 8.063390 7.958390 7.856150 7.751440 7.651320 7.553170 7.452840 7.354920 7.259510 S21 174.775 171.459 168.606 165.874 163.101 160.282 157.597 154.845 152.097 149.449 146.811 144.176 141.59 139.003 136.446 133.89 131.409 128.963 126.525 124.132 121.744 119.381 117.045 114.76 112.507 110.251 108.055 105.876 103.703 101.399 99.278 97.137 95.075 93.021 90.99 88.942 86.97 84.972 83.012 81.047 79.114 77.223 75.325 73.436 |S12| 0.069393 0.069131 0.068870 0.068640 0.068460 0.068400 0.068380 0.068210 0.068260 0.068090 0.068040 0.068000 0.067790 0.067690 0.067590 0.067520 0.067420 0.067380 0.067220 0.067050 0.066970 0.066930 0.066790 0.066840 0.066710 0.066685 0.066670 0.066687 0.066764 0.066970 0.067057 0.067090 0.067170 0.067200 0.067260 0.067320 0.067420 0.067460 0.067560 0.067600 0.067810 0.067960 0.067980 0.068230 S12 - 1.296 - 1.887 - 2.702 - 3.308 - 3.908 - 4.523 - 5.134 - 5.794 - 6.391 - 6.918 - 7.57 - 8.199 - 8.743 - 9.285 - 9.831 - 10.415 - 10.866 - 11.449 - 11.901 - 12.399 - 12.949 - 13.483 - 13.882 - 14.46 - 14.928 - 15.375 - 15.818 - 16.365 - 16.815 - 17.493 - 17.963 - 18.477 - 18.984 - 19.462 - 19.938 - 20.42 - 20.891 - 21.389 - 21.917 - 22.347 - 22.888 - 23.444 - 23.91 - 24.487 |S22| 0.106264 0.112247 0.118610 0.127240 0.134977 0.144410 0.154090 0.164250 0.174550 0.185240 0.195510 0.206040 0.216910 0.227810 0.238140 0.248290 0.258400 0.268360 0.277810 0.287510 0.297010 0.306110 0.314950 0.323700 0.332570 0.339940 0.348650 0.356290 0.360061 0.364627 0.369410 0.374600 0.380650 0.386070 0.391590 0.396600 0.402290 0.407630 0.412720 0.418620 0.423200 0.428690 0.433410 0.438440 S22 - 133.221 - 135.449 - 136.522 - 137.648 - 138.763 - 139.895 - 140.998 - 142.085 - 143.132 - 144.211 - 145.338 - 146.461 - 147.659 - 148.902 - 150.118 - 151.55 - 153.097 - 154.786 - 156.435 - 158.367 - 160.411 - 162.397 - 164.386 - 166.443 - 168.554 - 170.582 - 172.695 - 174.724 - 177.374 - 179.169 179.129 177.406 175.7 174.044 172.328 170.798 169.234 167.75 166.176 164.723 163.19 161.75 160.241 (continued)
NOT RECOMMENDED FOR NEW DESIGN
200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250
MMG3013NT1 8 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
150
- 134.322
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 90 mA, TC = 25C, 50 Ohm System) (continued)
f MHz 2300 S11 |S11| 0.100260 0.098910 0.097870 0.096530 0.095360 0.094140 0.093150 0.092180 0.091130 0.090470 0.089850 0.088790 0.088180 0.087640 0.086490 0.087170 0.086660 0.086130 0.086330 0.086760 0.086510 0.086820 0.087230 0.087680 0.087990 0.088730 0.089200 54.54 53.312 52.576 51.814 50.69 49.939 49.177 48.019 47.141 46.394 45.454 44.657 44.083 43.291 42.549 42.041 41.37 41.387 41.301 41.239 41.638 41.81 42.12 42.727 43.424 44.082 45.12 |S21| 7.163530 7.072340 6.980770 6.892310 6.802480 6.719330 6.634260 6.554070 6.471630 6.392370 6.314980 6.238550 6.166300 6.088480 6.020040 5.950380 5.881680 5.814190 5.749680 5.684930 5.619060 5.557890 5.498110 5.437290 5.376810 5.319060 5.259990 S21 71.577 69.734 67.882 66.059 64.259 62.461 60.65 58.859 57.062 55.299 53.505 51.724 50.021 48.207 46.489 44.764 43.022 41.268 39.547 37.829 36.098 34.368 32.629 30.936 29.22 27.529 25.838 |S12| 0.068190 0.068480 0.068550 0.068780 0.068940 0.069120 0.069290 0.069490 0.069610 0.069850 0.070210 0.070340 0.070550 0.070750 0.071030 0.071280 0.071610 0.071920 0.072150 0.072340 0.072640 0.072800 0.073130 0.073490 0.073710 0.073970 0.074200 S12 - 24.984 - 25.485 - 26.108 - 26.694 - 27.154 - 27.644 - 28.295 - 28.971 - 29.561 - 30.111 - 30.649 - 31.402 - 32.044 - 32.738 - 33.388 - 34.097 - 34.666 - 35.528 - 36.302 - 36.943 - 37.799 - 38.546 - 39.319 - 40.144 - 40.92 - 41.673 - 42.467 |S22| 0.442830 0.447010 0.451420 0.457800 0.460110 0.464930 0.469350 0.473140 0.477010 0.481850 0.485260 0.489440 0.494180 0.497180 0.501590 0.505070 0.509400 0.514040 0.518490 0.523620 0.525880 0.530230 0.534740 0.538080 0.542580 0.546650 0.550400 S22 158.869 155.974 154.6 153.074 151.617 150.014 148.442 146.825 145.214 143.56 141.782 140.078 138.23 136.357 134.738 132.754 130.875 128.954 126.955 124.995 123.081 121.057 119.195 117.253 115.36 113.481
NOT RECOMMENDED FOR NEW DESIGN
2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600
MMG3013NT1 RF Device Data Freescale Semiconductor 9
NOT RECOMMENDED FOR NEW DESIGN
2350
157.463
1.7 7.62 0.305 diameter
NOT RECOMMENDED FOR NEW DESIGN
5.33 1.27 1.27 0.86 0.64 3.86 0.58 2.54
Recommended Solder Stencil
NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH.
Figure 20. Recommended Mounting Configuration
MMG3013NT1 10 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
3.48
2.49
PACKAGE DIMENSIONS
NOT RECOMMENDED FOR NEW DESIGN
MMG3013NT1 RF Device Data Freescale Semiconductor 11
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
12
MMG3013NT1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
RF Device Data Freescale Semiconductor
MMG3013NT1
13
NOT RECOMMENDED FOR NEW DESIGN
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3100: General Purpose Amplifier Biasing
NOT RECOMMENDED FOR NEW DESIGN
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 4 5 6 Date Mar. 2007 July 2007 Mar. 2008 * * Description Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing dimension for Pin 1 and Pin 3.
* Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 * Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5
* Corrected S - Parameter table frequency column label to read "MHz" versus "GHz" and corrected frequency values from GHz to MHz, p. 8, 9
MMG3013NT1 14 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
How to Reach Us:
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MMG3013NT1
Document Number: RF Device Data MMG3013NT1 Rev. 6, 3/2008 Freescale Semiconductor
15
NOT RECOMMENDED FOR NEW DESIGN

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